An element, such as silicon, that is intermediate in electrical conductivity between conductors and insulators, through which conduction takes place by means of holes and electrons. The conductivity of a semiconductor is changed by the addition of small amounts of impurities to its crystal structure.
The resistance between metallic contacts and the semiconductor.
A semiconductor for which the predominant charge carriers responsible for electrical conduction are electrons. Normally, donor impurity atoms give rise to the excess electrons.
A semiconductor for which the predominant charge carriers responsible for electrical conduction are holes. Normally, acceptor impurity atoms give rise to the excess holes. Produced by doping an intrinsic semiconductor with an electron acceptor impurity (e.g., boron in silicon).
See also: Amorphous Semiconductor, Boule, Chemical Vapour Deposition, Conduction Band, Czochralski Process, Depletion Region, Extrinsic Semiconductor, Gallium Arsenide, Grown Junction, Hot Carrier, Indium Gallium Aluminium Nitride, Indium Gallium Arsenide, Indium Gallium Nitride, Indium Gallium Phosphide, Intrinsic Semiconductor, Magnesium Sulphide, Minority Carriers, p-n Junction, Solid State Device, Sputtering, Transistor, Trivalent Impurity, Wafer.