In a MOSFET device the gate is insulated from the channel by a very thin (typically less than the wavelength of light) layer of glass (silicon dioxide) and the gate is either metal or doped silicon (polysilicon), hence the acronym metal-oxide semiconductor.

See also: Dual Gate Mosfet, Field Effect Transistor, Induced Channel MOSFET, N-MOSFET, P-MOSFET.

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Subjects: Electronics