Indium III Oxide

Used as an n-type semiconductor and as a resistive element in integrated circuits. This wide band gap semiconductor can be heavily doped with tin to make a highly conductive, transparent thin film.


Front contact or one component of a heterojunction solar cell.

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Atomic / Molecular Weight 277.64 gmol-1Clip
Density 7179 kgm-3Clip
Melting Point 2183 KClip
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See also: Indium, Oxygen.

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Subjects: Chemistry Semiconductors