Indium III Oxide

Used as an n-type semiconductor and as a resistive element in integrated circuits. This wide band gap semiconductor can be heavily doped with tin to make a highly conductive, transparent thin film.


Symbol
In2O3

Uses
Front contact or one component of a heterojunction solar cell.

Click on an item to paste into clipboard or use clipboard symbol at end to clipboard all values
Atomic / Molecular Weight 277.64 gmol-1Clip
Density 7179 kgm-3Clip
Melting Point 2183 KClip
paste all data into clipboardpaste all data into clipboard

See also: Indium, Oxygen.

Previous PageView links to and from this pageNext Page

Subjects: Chemistry Semiconductors